IXYS - IXFR40N90P

KEY Part #: K6395618

IXFR40N90P Pricing (USD) [5116PC Stock]

  • 1 pcs$9.36153
  • 30 pcs$9.31496

Nimewo Pati:
IXFR40N90P
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH ISOPLUS247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Modil yo, Diodes - Bridge rèktifikateur, Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - RF and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
We specialize in IXYS IXFR40N90P electronic components. IXFR40N90P can be shipped within 24 hours after order. If you have any demands for IXFR40N90P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFR40N90P Atribi pwodwi yo

Nimewo Pati : IXFR40N90P
Manifakti : IXYS
Deskripsyon : MOSFET N-CH ISOPLUS247
Seri : HiPerFET™, PolarP2™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 900V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 21A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 230 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 6.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 230nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 14000pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 300W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : ISOPLUS247™
Pake / Ka : ISOPLUS247™