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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. HUF75332P3

ON Semiconductor - HUF75332P3

KEY Part #: K6399129

HUF75332P3 Pricing (USD) [56337PC Stock]

  • 1 pcs$0.69405
  • 10 pcs$0.61377
  • 100 pcs$0.48495
  • 500 pcs$0.37610
  • 1,000 pcs$0.28087
Nimewo Pati:
HUF75332P3
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 55V 60A TO-220AB.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays, Tiristors - SCR, Tiristors - SCR - Modil yo, Tiristors - TRIACs, Transistors - JFETs, Transistors - FETs, MOSFETs - Arrays and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
Avantaj konpetitif:
We specialize in ON Semiconductor HUF75332P3 electronic components. HUF75332P3 can be shipped within 24 hours after order. If you have any demands for HUF75332P3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

HUF75332P3 Atribi pwodwi yo

Nimewo Pati : HUF75332P3
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 55V 60A TO-220AB
Seri : UltraFET™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 55V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 60A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 19 mOhm @ 60A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 85nC @ 20V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1300pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 145W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220-3
Pake / Ka : TO-220-3

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