SISH106DN-T1-GE3 Pricing (USD) [114968PC Stock]
- 1 pcs$0.32172
- Nimewo Pati:
- SISH106DN-T1-GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N-CHAN PPAK 1212-8SH.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - FETs, MOSFETs - Arrays, Diodes - Rèkteur - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - SCR, Transistors - Bipolè (BJT) - Single, Tiristors - DIACs, SIDACs and Transistors - IGBTs - Single ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SISH106DN-T1-GE3 electronic components. SISH106DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SISH106DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SISH106DN-T1-GE3 Atribi pwodwi yo
Nimewo Pati :
SISH106DN-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CHAN PPAK 1212-8SH
Seri :
TrenchFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
12.5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V, 4.5V
RD sou (Max) @ Id, Vgs :
6.2 mOhm @ 19.5A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
27nC @ 4.5V
Vgs (Max) :
±12V
Antre kapasite (Ciss) (Max) @ Vds :
-
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.5W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PowerPAK® 1212-8SH
Pake / Ka :
PowerPAK® 1212-8SH
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