[1131PC Stock]
- Nimewo Pati:
- IRF7665S2TR1PBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 100V 4.1A DFET SB.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays and Diodes - Rèkteur - Single ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRF7665S2TR1PBF electronic components. IRF7665S2TR1PBF can be shipped within 24 hours after order. If you have any demands for IRF7665S2TR1PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF7665S2TR1PBF Atribi pwodwi yo
Nimewo Pati :
IRF7665S2TR1PBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 100V 4.1A DFET SB
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4.1A (Ta), 14.4A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
62 mOhm @ 8.9A, 10V
Vgs (th) (Max) @ Id :
5V @ 25µA
Chaje Gate (Qg) (Max) @ Vgs :
13nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
515pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2.4W (Ta), 30W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
DIRECTFET SB
Pake / Ka :
DirectFET™ Isometric SB
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