[1161PC Stock]
- Nimewo Pati:
- DMN4009LK3-13
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET N-CH 40V 18A DPAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - RF, Diodes - Zener - Arrays, Transistors - Pwogramasyon Unijunction, Transistors - IGBTs - Arrays, Transistors - IGBTs - Single and Transistors - Bipolè (BJT) - RF ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMN4009LK3-13 electronic components. DMN4009LK3-13 can be shipped within 24 hours after order. If you have any demands for DMN4009LK3-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN4009LK3-13 Atribi pwodwi yo
Nimewo Pati :
DMN4009LK3-13
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET N-CH 40V 18A DPAK
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
18A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
8.5 mOhm @ 14A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
21nC @ 4.5V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
2072pF @ 20V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2.19W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-252-3
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
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