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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. EPC2039

EPC - EPC2039

KEY Part #: K6420247

EPC2039 Pricing (USD) [148445PC Stock]

  • 1 pcs$0.27545
  • 2,500 pcs$0.27408
Nimewo Pati:
EPC2039
Manifakti:
EPC
Detaye deskripsyon:
GANFET TRANS 80V BUMPED DIE.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Arrays, Modil pouvwa chofè, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays, Tiristors - SCR and Transistors - Objektif espesyal ...
Avantaj konpetitif:
We specialize in EPC EPC2039 electronic components. EPC2039 can be shipped within 24 hours after order. If you have any demands for EPC2039, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

EPC2039 Atribi pwodwi yo

Nimewo Pati : EPC2039
Manifakti : EPC
Deskripsyon : GANFET TRANS 80V BUMPED DIE
Seri : eGaN®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : GaNFET (Gallium Nitride)
Drenaj nan Voltage Sous (Vdss) : 80V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6.8A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 5V
RD sou (Max) @ Id, Vgs : 25 mOhm @ 6A, 5V
Vgs (th) (Max) @ Id : 2.5V @ 2mA
Chaje Gate (Qg) (Max) @ Vgs : 2.4nC @ 5V
Vgs (Max) : +6V, -4V
Antre kapasite (Ciss) (Max) @ Vds : 210pF @ 40V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : -
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : Die
Pake / Ka : Die
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