Infineon Technologies - IRF6655TRPBF

KEY Part #: K6416830

IRF6655TRPBF Pricing (USD) [147665PC Stock]

  • 1 pcs$0.25173
  • 4,800 pcs$0.25048

Nimewo Pati:
IRF6655TRPBF
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 100V 4.2A DIRECTFET.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - Single, Diodes - RF and Diodes - Zener - Arrays ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRF6655TRPBF Atribi pwodwi yo

Nimewo Pati : IRF6655TRPBF
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 100V 4.2A DIRECTFET
Seri : HEXFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4.2A (Ta), 19A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 62 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id : 4.8V @ 25µA
Chaje Gate (Qg) (Max) @ Vgs : 11.7nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 530pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.2W (Ta), 42W (Tc)
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : DIRECTFET™ SH
Pake / Ka : DirectFET™ Isometric SH