Nimewo Pati :
IXTH1N170DHV
Deskripsyon :
MOSFET N-CH
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
1700V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1A (Tj)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
0V
RD sou (Max) @ Id, Vgs :
16 Ohm @ 500mA, 0V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
47nC @ 5V
Antre kapasite (Ciss) (Max) @ Vds :
3090pF @ 25V
Karakteristik FET :
Depletion Mode
Disipasyon Pouvwa (Max) :
290W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247HV
Pake / Ka :
TO-247-3 Variant