BSZ15DC02KDHXTMA1 Pricing (USD) [213080PC Stock]
- 1 pcs$0.17445
- 5,000 pcs$0.17358
- Nimewo Pati:
- BSZ15DC02KDHXTMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N/P-CH 20V 8TDSON.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Diodes - Zener - Arrays, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Single, Transistors - JFETs, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - Single and Transistors - FETs, MOSFETs - RF ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies BSZ15DC02KDHXTMA1 electronic components. BSZ15DC02KDHXTMA1 can be shipped within 24 hours after order. If you have any demands for BSZ15DC02KDHXTMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSZ15DC02KDHXTMA1 Atribi pwodwi yo
Nimewo Pati :
BSZ15DC02KDHXTMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N/P-CH 20V 8TDSON
Seri :
Automotive, AEC-Q101, HEXFET®
Estati Pati :
Active
FET Kalite :
N and P-Channel Complementary
Karakteristik FET :
Logic Level Gate, 2.5V Drive
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
5.1A, 3.2A
RD sou (Max) @ Id, Vgs :
55 mOhm @ 5.1A, 4.5V
Vgs (th) (Max) @ Id :
1.4V @ 110µA
Chaje Gate (Qg) (Max) @ Vgs :
2.8nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
419pF @ 10V
Pouvwa - Max :
2.5W
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-PowerTDFN
Pake Aparèy Founisè :
PG-TSDSON-8-FL
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