IXFH70N20Q3 Pricing (USD) [9052PC Stock]
- 1 pcs$5.23111
- 10 pcs$4.70932
- 100 pcs$3.87225
- 500 pcs$3.24431
- Nimewo Pati:
- IXFH70N20Q3
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 200V 70A TO-247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Arrays, Diodes - Zener - Single, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Single, Diodes - RF and Tiristors - SCR - Modil yo ...
- Avantaj konpetitif:
- We specialize in IXYS IXFH70N20Q3 electronic components. IXFH70N20Q3 can be shipped within 24 hours after order. If you have any demands for IXFH70N20Q3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFH70N20Q3 Atribi pwodwi yo
Nimewo Pati :
IXFH70N20Q3
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 200V 70A TO-247
Seri :
HiPerFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
70A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
40 mOhm @ 35A, 10V
Vgs (th) (Max) @ Id :
6.5V @ 4mA
Chaje Gate (Qg) (Max) @ Vgs :
67nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
3150pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
690W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247AD (IXFH)
Pake / Ka :
TO-247-3
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