IXTB30N100L Pricing (USD) [2171PC Stock]
- 1 pcs$22.06054
- 25 pcs$21.95078
- Nimewo Pati:
- IXTB30N100L
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 1000V 30A PLUS264.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Transistors - JFETs, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Modil pouvwa chofè and Diodes - Zener - Arrays ...
- Avantaj konpetitif:
- We specialize in IXYS IXTB30N100L electronic components. IXTB30N100L can be shipped within 24 hours after order. If you have any demands for IXTB30N100L, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTB30N100L Atribi pwodwi yo
Nimewo Pati :
IXTB30N100L
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 1000V 30A PLUS264
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
1000V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
30A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
20V
RD sou (Max) @ Id, Vgs :
450 mOhm @ 500mA, 20V
Vgs (th) (Max) @ Id :
5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
545nC @ 20V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
13200pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
800W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
PLUS264™
Pake / Ka :
TO-264-3, TO-264AA
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