Nimewo Pati :
TK20G60W,RVQ
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N CH 600V 20A D2PAK
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
20A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
155 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
3.7V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
48nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
1680pF @ 300V
Karakteristik FET :
Super Junction
Disipasyon Pouvwa (Max) :
165W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
D2PAK
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB