Toshiba Semiconductor and Storage - TK20G60W,RVQ

KEY Part #: K6418758

TK20G60W,RVQ Pricing (USD) [76236PC Stock]

  • 1 pcs$0.56699
  • 1,000 pcs$0.56417

Nimewo Pati:
TK20G60W,RVQ
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
MOSFET N CH 600V 20A D2PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - JFETs, Tiristors - DIACs, SIDACs, Tiristors - SCR - Modil yo, Transistors - Objektif espesyal and Transistors - Pwogramasyon Unijunction ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage TK20G60W,RVQ electronic components. TK20G60W,RVQ can be shipped within 24 hours after order. If you have any demands for TK20G60W,RVQ, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK20G60W,RVQ Atribi pwodwi yo

Nimewo Pati : TK20G60W,RVQ
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET N CH 600V 20A D2PAK
Seri : DTMOSIV
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 20A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 155 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id : 3.7V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 48nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 1680pF @ 300V
Karakteristik FET : Super Junction
Disipasyon Pouvwa (Max) : 165W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D2PAK
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB