STMicroelectronics - STU6N65K3

KEY Part #: K6403777

STU6N65K3 Pricing (USD) [82036PC Stock]

  • 1 pcs$1.48957
  • 10 pcs$1.34369
  • 100 pcs$1.02447
  • 500 pcs$0.79680
  • 1,000 pcs$0.66020

Nimewo Pati:
STU6N65K3
Manifakti:
STMicroelectronics
Detaye deskripsyon:
MOSFET N-CH 650V 5.4A IPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - Single, Diodes - Rèkteur - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - DIACs, SIDACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - IGBTs - Modil yo ...
Avantaj konpetitif:
We specialize in STMicroelectronics STU6N65K3 electronic components. STU6N65K3 can be shipped within 24 hours after order. If you have any demands for STU6N65K3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STU6N65K3 Atribi pwodwi yo

Nimewo Pati : STU6N65K3
Manifakti : STMicroelectronics
Deskripsyon : MOSFET N-CH 650V 5.4A IPAK
Seri : SuperMESH3™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 5.4A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 1.3 Ohm @ 2.7A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 50µA
Chaje Gate (Qg) (Max) @ Vgs : 33nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 880pF @ 50V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 110W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : I-PAK
Pake / Ka : TO-251-3 Short Leads, IPak, TO-251AA

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