IXYS - IXFN25N90

KEY Part #: K6402672

IXFN25N90 Pricing (USD) [3219PC Stock]

  • 1 pcs$14.19991
  • 10 pcs$14.12926

Nimewo Pati:
IXFN25N90
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 900V 25A SOT-227B.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - RF, Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - Single, Tiristors - TRIACs, Diodes - RF and Transistors - IGBTs - Single ...
Avantaj konpetitif:
We specialize in IXYS IXFN25N90 electronic components. IXFN25N90 can be shipped within 24 hours after order. If you have any demands for IXFN25N90, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFN25N90 Atribi pwodwi yo

Nimewo Pati : IXFN25N90
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 900V 25A SOT-227B
Seri : HiPerFET™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 900V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 25A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 330 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id : 5V @ 8mA
Chaje Gate (Qg) (Max) @ Vgs : 240nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 10800pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 600W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake Aparèy Founisè : SOT-227B
Pake / Ka : SOT-227-4, miniBLOC

Ou ka enterese tou
  • BS170PSTOB

    Diodes Incorporated

    MOSFET N-CH 60V 0.27A TO92-3.

  • DN2540N3-G

    Microchip Technology

    MOSFET N-CH 400V 0.12A TO92-3.

  • GP2M005A060CG

    Global Power Technologies Group

    MOSFET N-CH 600V 4.2A DPAK.

  • GP2M005A050CG

    Global Power Technologies Group

    MOSFET N-CH 500V 4.5A DPAK.

  • GP1M016A025CG

    Global Power Technologies Group

    MOSFET N-CH 250V 16A DPAK.

  • GP1M008A050CG

    Global Power Technologies Group

    MOSFET N-CH 500V 8A DPAK.