Nimewo Pati :
IPB65R095C7ATMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH TO263-3
Estati Pati :
Discontinued at Digi-Key
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
24A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
95 mOhm @ 11.8A, 10V
Vgs (th) (Max) @ Id :
4V @ 590µA
Chaje Gate (Qg) (Max) @ Vgs :
45nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
2140pF @ 400V
Disipasyon Pouvwa (Max) :
128W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
D²PAK (TO-263AB)
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB