[849PC Stock]
- Nimewo Pati:
- IRFS4010PBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 100V 180A D2PAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Transistors - Objektif espesyal, Modil pouvwa chofè, Diodes - Bridge rèktifikateur, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays, Diodes - Zener - Arrays and Tiristors - DIACs, SIDACs ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRFS4010PBF electronic components. IRFS4010PBF can be shipped within 24 hours after order. If you have any demands for IRFS4010PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFS4010PBF Atribi pwodwi yo
Nimewo Pati :
IRFS4010PBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 100V 180A D2PAK
Seri :
HEXFET®
Estati Pati :
Discontinued at Digi-Key
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
180A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
4.7 mOhm @ 106A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
215nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
9575pF @ 50V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
375W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
D2PAK
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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