SI7900AEDN-T1-GE3 Pricing (USD) [167720PC Stock]
- 1 pcs$0.22053
- 3,000 pcs$0.20708
- Nimewo Pati:
- SI7900AEDN-T1-GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET 2N-CH 20V 6A PPAK 1212-8.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - Single, Modil pouvwa chofè, Transistors - Objektif espesyal, Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Single and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SI7900AEDN-T1-GE3 electronic components. SI7900AEDN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI7900AEDN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI7900AEDN-T1-GE3 Atribi pwodwi yo
Nimewo Pati :
SI7900AEDN-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET 2N-CH 20V 6A PPAK 1212-8
Seri :
TrenchFET®
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual) Common Drain
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
6A
RD sou (Max) @ Id, Vgs :
26 mOhm @ 8.5A, 4.5V
Vgs (th) (Max) @ Id :
900mV @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
16nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
-
Pouvwa - Max :
1.5W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
PowerPAK® 1212-8 Dual
Pake Aparèy Founisè :
PowerPAK® 1212-8 Dual
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