NGTB03N60R2DT4G Pricing (USD) [9227PC Stock]
- 2,500 pcs$0.13928
- 5,000 pcs$0.12967
- 12,500 pcs$0.12807
- Nimewo Pati:
- NGTB03N60R2DT4G
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- IGBT 9A 600V DPAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Modil pouvwa chofè, Diodes - RF, Tiristors - SCR - Modil yo, Tiristors - DIACs, SIDACs, Diodes - Bridge rèktifikateur, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Diodes - Varyab kapasite (Varicaps, Varactors) ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor NGTB03N60R2DT4G electronic components. NGTB03N60R2DT4G can be shipped within 24 hours after order. If you have any demands for NGTB03N60R2DT4G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NGTB03N60R2DT4G Atribi pwodwi yo
Nimewo Pati :
NGTB03N60R2DT4G
Manifakti :
ON Semiconductor
Deskripsyon :
IGBT 9A 600V DPAK
Seri :
-
Estati Pati :
Active
Kalite IGBT :
-
Voltage - Pèseptè ki emèt deba (Max) :
600V
Kouran - Pèseptè (Ic) (Max) :
9A
Kouran - Pèseptè batman (Icm) :
12A
Vce (sou) (Max) @ Vge, Ic :
2.1V @ 15V, 3A
Pouvwa - Max :
49W
Oblije chanje enèji :
50µJ (on), 27µJ (off)
Kalite Antre :
Standard
Gate chaje :
17nC
Td (on / off) @ 25 ° C :
27ns/59ns
Kondisyon egzamen an :
300V, 3A, 30 Ohm, 15V
Ranvèse Tan Reverse (trr) :
65ns
Operating Tanperati :
175°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
Pake Aparèy Founisè :
DPAK
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