EPC2007C Pricing (USD) [101213PC Stock]
- 1 pcs$0.41183
- 2,500 pcs$0.40978
- Nimewo Pati:
- EPC2007C
- Manifakti:
- EPC
- Detaye deskripsyon:
- GANFET TRANS 100V 6A BUMPED DIE.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - SCR, Diodes - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - RF and Diodes - Zener - Arrays ...
- Avantaj konpetitif:
- We specialize in EPC EPC2007C electronic components. EPC2007C can be shipped within 24 hours after order. If you have any demands for EPC2007C, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
EPC2007C Atribi pwodwi yo
Nimewo Pati :
EPC2007C
Manifakti :
EPC
Deskripsyon :
GANFET TRANS 100V 6A BUMPED DIE
Seri :
eGaN®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
GaNFET (Gallium Nitride)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
6A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
5V
RD sou (Max) @ Id, Vgs :
30 mOhm @ 6A, 5V
Vgs (th) (Max) @ Id :
2.5V @ 1.2mA
Chaje Gate (Qg) (Max) @ Vgs :
2.2nC @ 5V
Vgs (Max) :
+6V, -4V
Antre kapasite (Ciss) (Max) @ Vds :
220pF @ 50V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
-
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
Die Outline (5-Solder Bar)
Pake / Ka :
Die
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