DMN61D9U-7 Pricing (USD) [1257008PC Stock]
- 1 pcs$0.02943
- 3,000 pcs$0.02697
- Nimewo Pati:
- DMN61D9U-7
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET N-CH 60V 0.38A.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Diodes - Zener - Arrays, Diodes - RF, Tiristors - DIACs, SIDACs, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Modil pouvwa chofè and Diodes - Rèkteur - Arrays ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMN61D9U-7 electronic components. DMN61D9U-7 can be shipped within 24 hours after order. If you have any demands for DMN61D9U-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN61D9U-7 Atribi pwodwi yo
Nimewo Pati :
DMN61D9U-7
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET N-CH 60V 0.38A
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
380mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.8V, 5V
RD sou (Max) @ Id, Vgs :
2 Ohm @ 50mA, 5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
0.4nC @ 4.5V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
28.5pF @ 30V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
370mW (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SOT-23
Pake / Ka :
TO-236-3, SC-59, SOT-23-3
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