Infineon Technologies - IRLML5203TRPBF

KEY Part #: K6418082

IRLML5203TRPBF Pricing (USD) [675342PC Stock]

  • 1 pcs$0.05477
  • 3,000 pcs$0.04565

Nimewo Pati:
IRLML5203TRPBF
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET P-CH 30V 3A SOT-23.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Arrays, Tiristors - TRIACs, Transistors - Bipolè (BJT) - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - IGBTs - Arrays ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRLML5203TRPBF Atribi pwodwi yo

Nimewo Pati : IRLML5203TRPBF
Manifakti : Infineon Technologies
Deskripsyon : MOSFET P-CH 30V 3A SOT-23
Seri : HEXFET®
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 98 mOhm @ 3A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 14nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 510pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1.25W (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : Micro3™/SOT-23
Pake / Ka : TO-236-3, SC-59, SOT-23-3

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