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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Arrays
  5. NTHD4502NT1G

ON Semiconductor - NTHD4502NT1G

KEY Part #: K6523250

NTHD4502NT1G Pricing (USD) [308600PC Stock]

  • 1 pcs$0.12046
  • 3,000 pcs$0.11986
Nimewo Pati:
NTHD4502NT1G
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET 2N-CH 30V 2.2A CHIPFET.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Rèkteur - Single, Tiristors - DIACs, SIDACs, Transistors - JFETs, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Arrays and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
Avantaj konpetitif:
We specialize in ON Semiconductor NTHD4502NT1G electronic components. NTHD4502NT1G can be shipped within 24 hours after order. If you have any demands for NTHD4502NT1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NTHD4502NT1G Atribi pwodwi yo

Nimewo Pati : NTHD4502NT1G
Manifakti : ON Semiconductor
Deskripsyon : MOSFET 2N-CH 30V 2.2A CHIPFET
Seri : -
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.2A
RD sou (Max) @ Id, Vgs : 85 mOhm @ 2.9A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 7nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 140pF @ 15V
Pouvwa - Max : 640mW
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-SMD, Flat Lead
Pake Aparèy Founisè : ChipFET™

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