Manifakti :
Alpha & Omega Semiconductor Inc.
Deskripsyon :
MOSFET 2N-CH 25V 15A/26.5A 8DFN
FET Kalite :
2 N-Channel (Half Bridge)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
25V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
15A, 26.5A
RD sou (Max) @ Id, Vgs :
5.2 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2.3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
21nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
1560pF @ 15V
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-WDFN Exposed Pad
Pake Aparèy Founisè :
8-DFN-EP (5x6)