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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Arrays
  5. FDS8958B_G

ON Semiconductor - FDS8958B_G

KEY Part #: K6523526

[4136PC Stock]

    Nimewo Pati:
    FDS8958B_G
    Manifakti:
    ON Semiconductor
    Detaye deskripsyon:
    MOSFET N/P-CH 30V 6.4A/4.5A 8SO.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - TRIACs, Modil pouvwa chofè, Diodes - Zener - Arrays, Diodes - RF, Tiristors - DIACs, SIDACs and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
    Avantaj konpetitif:
    We specialize in ON Semiconductor FDS8958B_G electronic components. FDS8958B_G can be shipped within 24 hours after order. If you have any demands for FDS8958B_G, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    FDS8958B_G Atribi pwodwi yo

    Nimewo Pati : FDS8958B_G
    Manifakti : ON Semiconductor
    Deskripsyon : MOSFET N/P-CH 30V 6.4A/4.5A 8SO
    Seri : PowerTrench®
    Estati Pati : Obsolete
    FET Kalite : N and P-Channel
    Karakteristik FET : Standard
    Drenaj nan Voltage Sous (Vdss) : 30V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6.4A, 4.5A
    RD sou (Max) @ Id, Vgs : 26 mOhm @ 6.4A, 10V, 51 mOhm @ 4.5A, 10V
    Vgs (th) (Max) @ Id : 3V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 5.8nC @ 4.5V, 9.6nC @ 4.5V
    Antre kapasite (Ciss) (Max) @ Vds : 540pF @ 15V, 760pF @ 15V
    Pouvwa - Max : 900mW
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake / Ka : 8-SOIC (0.154", 3.90mm Width)
    Pake Aparèy Founisè : 8-SO

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