Nimewo Pati :
APTC60HM70SCTG
Manifakti :
Microsemi Corporation
Deskripsyon :
MOSFET 4N-CH 600V 39A SP4
FET Kalite :
4 N-Channel (H-Bridge)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
39A
RD sou (Max) @ Id, Vgs :
70 mOhm @ 39A, 10V
Vgs (th) (Max) @ Id :
3.9V @ 2.7mA
Chaje Gate (Qg) (Max) @ Vgs :
259nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
7000pF @ 25V
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Chassis Mount
Pake Aparèy Founisè :
SP4