PMPB215ENEA/FX Pricing (USD) [577363PC Stock]
- 1 pcs$0.06438
- 3,000 pcs$0.06406
- Nimewo Pati:
- PMPB215ENEA/FX
- Manifakti:
- Nexperia USA Inc.
- Detaye deskripsyon:
- MOSFET N-CH 80V 2.8A 6DFN2020MD.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Diodes - Rèkteur - Arrays, Tiristors - DIACs, SIDACs, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - Arrays, Diodes - RF and Transistors - Objektif espesyal ...
- Avantaj konpetitif:
- We specialize in Nexperia USA Inc. PMPB215ENEA/FX electronic components. PMPB215ENEA/FX can be shipped within 24 hours after order. If you have any demands for PMPB215ENEA/FX, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMPB215ENEA/FX Atribi pwodwi yo
Nimewo Pati :
PMPB215ENEA/FX
Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET N-CH 80V 2.8A 6DFN2020MD
Seri :
Automotive, AEC-Q101
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
80V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2.8A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
230 mOhm @ 1.9A, 10V
Vgs (th) (Max) @ Id :
2.7V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
7.2nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
215pF @ 40V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.6W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
6-DFN2020MD (2x2)
Pake / Ka :
6-UDFN Exposed Pad
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