IXYS - IXTP6N50P

KEY Part #: K6419020

IXTP6N50P Pricing (USD) [87895PC Stock]

  • 1 pcs$0.51415
  • 50 pcs$0.51159

Nimewo Pati:
IXTP6N50P
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 500V 6A TO-220.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - JFETs, Transistors - FETs, MOSFETs - RF, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Arrays, Tiristors - SCR and Diodes - Zener - Single ...
Avantaj konpetitif:
We specialize in IXYS IXTP6N50P electronic components. IXTP6N50P can be shipped within 24 hours after order. If you have any demands for IXTP6N50P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTP6N50P Atribi pwodwi yo

Nimewo Pati : IXTP6N50P
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 500V 6A TO-220
Seri : PolarHV™
Estati Pati : Last Time Buy
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 1.1 Ohm @ 3A, 10V
Vgs (th) (Max) @ Id : 5V @ 50µA
Chaje Gate (Qg) (Max) @ Vgs : 14.6nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 740pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 100W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220AB
Pake / Ka : TO-220-3