Nimewo Pati :
EPC2111ENGRT
Deskripsyon :
GAN TRANS ASYMMETRICAL HALF BRID
FET Kalite :
2 N-Channel (Half Bridge)
Karakteristik FET :
GaNFET (Gallium Nitride)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
16A (Ta)
RD sou (Max) @ Id, Vgs :
19 mOhm @ 15A, 5V, 8 mOhm @ 15A, 5V
Vgs (th) (Max) @ Id :
2.5V @ 5mA
Chaje Gate (Qg) (Max) @ Vgs :
2.2nC @ 5V, 5.7nC @ 5V
Antre kapasite (Ciss) (Max) @ Vds :
230pF @ 15V, 590pF @ 15V
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
Die