EPC2111ENGRT Pricing (USD) [60727PC Stock]
- 1 pcs$0.71180
- 1,000 pcs$0.70826
- Nimewo Pati:
- EPC2111ENGRT
- Manifakti:
- EPC
- Detaye deskripsyon:
- GAN TRANS ASYMMETRICAL HALF BRID.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Transistors - Bipolè (BJT) - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Arrays, Transistors - Objektif espesyal, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Rèkteur - Single and Transistors - FETs, MOSFETs - Single ...
- Avantaj konpetitif:
- We specialize in EPC EPC2111ENGRT electronic components. EPC2111ENGRT can be shipped within 24 hours after order. If you have any demands for EPC2111ENGRT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
EPC2111ENGRT Atribi pwodwi yo
Nimewo Pati :
EPC2111ENGRT
Manifakti :
EPC
Deskripsyon :
GAN TRANS ASYMMETRICAL HALF BRID
Seri :
-
Estati Pati :
Active
FET Kalite :
2 N-Channel (Half Bridge)
Karakteristik FET :
GaNFET (Gallium Nitride)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
16A (Ta)
RD sou (Max) @ Id, Vgs :
19 mOhm @ 15A, 5V, 8 mOhm @ 15A, 5V
Vgs (th) (Max) @ Id :
2.5V @ 5mA
Chaje Gate (Qg) (Max) @ Vgs :
2.2nC @ 5V, 5.7nC @ 5V
Antre kapasite (Ciss) (Max) @ Vds :
230pF @ 15V, 590pF @ 15V
Pouvwa - Max :
-
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
Die
Pake Aparèy Founisè :
Die
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