EPC - EPC2111ENGRT

KEY Part #: K6523256

EPC2111ENGRT Pricing (USD) [60727PC Stock]

  • 1 pcs$0.71180
  • 1,000 pcs$0.70826

Nimewo Pati:
EPC2111ENGRT
Manifakti:
EPC
Detaye deskripsyon:
GAN TRANS ASYMMETRICAL HALF BRID.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Diodes - RF, Diodes - Rèkteur - Arrays, Transistors - JFETs, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - RF, Diodes - Zener - Arrays and Tiristors - DIACs, SIDACs ...
Avantaj konpetitif:
We specialize in EPC EPC2111ENGRT electronic components. EPC2111ENGRT can be shipped within 24 hours after order. If you have any demands for EPC2111ENGRT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

EPC2111ENGRT Atribi pwodwi yo

Nimewo Pati : EPC2111ENGRT
Manifakti : EPC
Deskripsyon : GAN TRANS ASYMMETRICAL HALF BRID
Seri : -
Estati Pati : Active
FET Kalite : 2 N-Channel (Half Bridge)
Karakteristik FET : GaNFET (Gallium Nitride)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 16A (Ta)
RD sou (Max) @ Id, Vgs : 19 mOhm @ 15A, 5V, 8 mOhm @ 15A, 5V
Vgs (th) (Max) @ Id : 2.5V @ 5mA
Chaje Gate (Qg) (Max) @ Vgs : 2.2nC @ 5V, 5.7nC @ 5V
Antre kapasite (Ciss) (Max) @ Vds : 230pF @ 15V, 590pF @ 15V
Pouvwa - Max : -
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : Die
Pake Aparèy Founisè : Die
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