Manifakti :
Renesas Electronics America Inc.
Deskripsyon :
MOSFET 2 N-CH 20V 9.4A 4QFN
FET Kalite :
2 N-Channel (Dual) Common Drain
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
9.4A (Ta)
RD sou (Max) @ Id, Vgs :
17 mOhm @ 3A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
3.5nC @ 4V
Antre kapasite (Ciss) (Max) @ Vds :
400pF @ 10V
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
4-QFN (2x2)