Infineon Technologies - BSO613SPV

KEY Part #: K6409984

[93PC Stock]


    Nimewo Pati:
    BSO613SPV
    Manifakti:
    Infineon Technologies
    Detaye deskripsyon:
    MOSFET P-CH 60V 3.44A 8DSO.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Tiristors - TRIACs, Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - RF, Transistors - Objektif espesyal, Tiristors - DIACs, SIDACs, Transistors - JFETs and Transistors - Pwogramasyon Unijunction ...
    Avantaj konpetitif:
    We specialize in Infineon Technologies BSO613SPV electronic components. BSO613SPV can be shipped within 24 hours after order. If you have any demands for BSO613SPV, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    BSO613SPV Atribi pwodwi yo

    Nimewo Pati : BSO613SPV
    Manifakti : Infineon Technologies
    Deskripsyon : MOSFET P-CH 60V 3.44A 8DSO
    Seri : SIPMOS®
    Estati Pati : Obsolete
    FET Kalite : P-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 60V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.44A (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 130 mOhm @ 3.44A, 10V
    Vgs (th) (Max) @ Id : 4V @ 1mA
    Chaje Gate (Qg) (Max) @ Vgs : 30nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 875pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 2.5W (Ta)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : PG-DSO-8
    Pake / Ka : 8-SOIC (0.154", 3.90mm Width)