Diodes Incorporated - DMG3415UFY4Q-7

KEY Part #: K6411828

DMG3415UFY4Q-7 Pricing (USD) [530436PC Stock]

  • 1 pcs$0.06973
  • 3,000 pcs$0.06281

Nimewo Pati:
DMG3415UFY4Q-7
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET P-CH 16V 2.5A X2-DFN2015.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Tiristors - SCR - Modil yo, Diodes - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - TRIACs, Transistors - Objektif espesyal, Transistors - JFETs and Tiristors - DIACs, SIDACs ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMG3415UFY4Q-7 Atribi pwodwi yo

Nimewo Pati : DMG3415UFY4Q-7
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET P-CH 16V 2.5A X2-DFN2015
Seri : -
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 16V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.8V, 4.5V
RD sou (Max) @ Id, Vgs : 39 mOhm @ 4A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 10nC @ 4.5V
Vgs (Max) : ±8V
Antre kapasite (Ciss) (Max) @ Vds : 282pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 650mW (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : X2-DFN2015-3
Pake / Ka : 3-XDFN