STMicroelectronics - STB80NF55-06-1

KEY Part #: K6399600

STB80NF55-06-1 Pricing (USD) [26270PC Stock]

  • 1 pcs$1.56889
  • 10 pcs$1.39966
  • 100 pcs$1.08894
  • 500 pcs$0.88179
  • 1,000 pcs$0.74367

Nimewo Pati:
STB80NF55-06-1
Manifakti:
STMicroelectronics
Detaye deskripsyon:
MOSFET N-CH 55V 80A I2PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STB80NF55-06-1 Atribi pwodwi yo

Nimewo Pati : STB80NF55-06-1
Manifakti : STMicroelectronics
Deskripsyon : MOSFET N-CH 55V 80A I2PAK
Seri : STripFET™ II
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 55V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 80A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 6.5 mOhm @ 40A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 189nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 4400pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 300W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : I2PAK
Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA

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