Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET P-CH 20V 1A WEMT6
Estati Pati :
Not For New Designs
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V, 4.5V
RD sou (Max) @ Id, Vgs :
390 mOhm @ 1A, 4.5V
Vgs (th) (Max) @ Id :
2V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
2.1nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
150pF @ 10V
Karakteristik FET :
Schottky Diode (Body)
Disipasyon Pouvwa (Max) :
700mW (Ta)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
6-WEMT
Pake / Ka :
SOT-563, SOT-666