Infineon Technologies - IPW60R045CPFKSA1

KEY Part #: K6406339

IPW60R045CPFKSA1 Pricing (USD) [4897PC Stock]

  • 1 pcs$8.84440

Nimewo Pati:
IPW60R045CPFKSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 650V 60A TO-247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Arrays, Transistors - IGBTs - Modil yo, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Single, Diodes - Zener - Arrays and Diodes - Zener - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPW60R045CPFKSA1 Atribi pwodwi yo

Nimewo Pati : IPW60R045CPFKSA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 650V 60A TO-247
Seri : CoolMOS™
Estati Pati : Not For New Designs
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 60A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 45 mOhm @ 44A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 3mA
Chaje Gate (Qg) (Max) @ Vgs : 190nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 6800pF @ 100V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 431W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : PG-TO247-3
Pake / Ka : TO-247-3

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