BSD223PH6327XTSA1 Pricing (USD) [893402PC Stock]
- 1 pcs$0.04140
- 3,000 pcs$0.02942
- Nimewo Pati:
- BSD223PH6327XTSA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET 2P-CH 20V 0.39A SOT363.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - SCR - Modil yo, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Single, Diodes - Varyab kapasite (Varicaps, Varactors) and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies BSD223PH6327XTSA1 electronic components. BSD223PH6327XTSA1 can be shipped within 24 hours after order. If you have any demands for BSD223PH6327XTSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSD223PH6327XTSA1 Atribi pwodwi yo
Nimewo Pati :
BSD223PH6327XTSA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET 2P-CH 20V 0.39A SOT363
Seri :
OptiMOS™
Estati Pati :
Active
FET Kalite :
2 P-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
390mA
RD sou (Max) @ Id, Vgs :
1.2 Ohm @ 390mA, 4.5V
Vgs (th) (Max) @ Id :
1.2V @ 1.5µA
Chaje Gate (Qg) (Max) @ Vgs :
0.62nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
56pF @ 15V
Pouvwa - Max :
250mW
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
6-VSSOP, SC-88, SOT-363
Pake Aparèy Founisè :
PG-SOT363-6
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