Nimewo Pati :
SQS966ENW-T1_GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CHAN 60V
Seri :
Automotive, AEC-Q101, TrenchFET®
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
6A (Tc)
RD sou (Max) @ Id, Vgs :
36 mOhm @ 1.25A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
8.8nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
572pF @ 25V
Pouvwa - Max :
27.8W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
PowerPAK® 1212-8W
Pake Aparèy Founisè :
PowerPAK® 1212-8W