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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Arrays
  5. NTMD6601NR2G

ON Semiconductor - NTMD6601NR2G

KEY Part #: K6523490

[4147PC Stock]

    Nimewo Pati:
    NTMD6601NR2G
    Manifakti:
    ON Semiconductor
    Detaye deskripsyon:
    MOSFET 2N-CH 80V 1.1A 8SOIC.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Diodes - Zener - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - SCR, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Arrays and Transistors - Bipolè (BJT) - RF ...
    Avantaj konpetitif:
    We specialize in ON Semiconductor NTMD6601NR2G electronic components. NTMD6601NR2G can be shipped within 24 hours after order. If you have any demands for NTMD6601NR2G, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    NTMD6601NR2G Atribi pwodwi yo

    Nimewo Pati : NTMD6601NR2G
    Manifakti : ON Semiconductor
    Deskripsyon : MOSFET 2N-CH 80V 1.1A 8SOIC
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : 2 N-Channel (Dual)
    Karakteristik FET : Logic Level Gate
    Drenaj nan Voltage Sous (Vdss) : 80V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1.1A
    RD sou (Max) @ Id, Vgs : 215 mOhm @ 2.2A, 10V
    Vgs (th) (Max) @ Id : 3V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 15nC @ 10V
    Antre kapasite (Ciss) (Max) @ Vds : 400pF @ 25V
    Pouvwa - Max : 600mW
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake / Ka : 8-SOIC (0.154", 3.90mm Width)
    Pake Aparèy Founisè : 8-SOIC

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