QS8J11TCR Pricing (USD) [486582PC Stock]
- 1 pcs$0.07602
- 3,000 pcs$0.06406
- Nimewo Pati:
- QS8J11TCR
- Manifakti:
- Rohm Semiconductor
- Detaye deskripsyon:
- MOSFET 2P-CH 12V 3.5A TSMT8.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Objektif espesyal, Tiristors - SCR - Modil yo, Tiristors - TRIACs, Transistors - Pwogramasyon Unijunction and Modil pouvwa chofè ...
- Avantaj konpetitif:
- We specialize in Rohm Semiconductor QS8J11TCR electronic components. QS8J11TCR can be shipped within 24 hours after order. If you have any demands for QS8J11TCR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
QS8J11TCR Atribi pwodwi yo
Nimewo Pati :
QS8J11TCR
Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET 2P-CH 12V 3.5A TSMT8
Seri :
-
Estati Pati :
Not For New Designs
FET Kalite :
2 P-Channel (Dual)
Karakteristik FET :
Logic Level Gate, 1.5V Drive
Drenaj nan Voltage Sous (Vdss) :
12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3.5A
RD sou (Max) @ Id, Vgs :
43 mOhm @ 3.5A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
22nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
2600pF @ 6V
Pouvwa - Max :
550mW
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SMD, Flat Lead
Pake Aparèy Founisè :
TSMT8
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