Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET 2N-CH 30V 7A/11A HSML
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
7A, 11A
RD sou (Max) @ Id, Vgs :
17.9 mOhm @ 7A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
11.1nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
500pF @ 15V
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-UDFN Exposed Pad
Pake Aparèy Founisè :
HSML3030L10