STGB30H60DFB Pricing (USD) [65490PC Stock]
- 1 pcs$0.59705
- 1,000 pcs$0.53350
- Nimewo Pati:
- STGB30H60DFB
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- TRENCH GATE FIELD-STOP IGBT HB.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Transistors - Bipolè (BJT) - Single, Diodes - Bridge rèktifikateur, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Single and Transistors - Bipolè (BJT) - RF ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics STGB30H60DFB electronic components. STGB30H60DFB can be shipped within 24 hours after order. If you have any demands for STGB30H60DFB, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STGB30H60DFB Atribi pwodwi yo
Nimewo Pati :
STGB30H60DFB
Manifakti :
STMicroelectronics
Deskripsyon :
TRENCH GATE FIELD-STOP IGBT HB
Seri :
-
Estati Pati :
Active
Kalite IGBT :
Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) :
600V
Kouran - Pèseptè (Ic) (Max) :
60A
Kouran - Pèseptè batman (Icm) :
120A
Vce (sou) (Max) @ Vge, Ic :
2V @ 15V, 30A
Pouvwa - Max :
260W
Oblije chanje enèji :
383µJ (on), 293µJ (off)
Kalite Antre :
Standard
Gate chaje :
149nC
Td (on / off) @ 25 ° C :
37ns/146ns
Kondisyon egzamen an :
400V, 30A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) :
53ns
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè :
D2PAK
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