Vishay Siliconix - SIS612EDNT-T1-GE3

KEY Part #: K6401169

SIS612EDNT-T1-GE3 Pricing (USD) [7983PC Stock]

  • 3,000 pcs$0.10093

Nimewo Pati:
SIS612EDNT-T1-GE3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET N-CH 20V 50A SMT.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - RF, Diodes - Zener - Single, Transistors - Objektif espesyal, Transistors - Pwogramasyon Unijunction, Diodes - Rèkteur - Single and Diodes - Zener - Arrays ...
Avantaj konpetitif:
We specialize in Vishay Siliconix SIS612EDNT-T1-GE3 electronic components. SIS612EDNT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIS612EDNT-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIS612EDNT-T1-GE3 Atribi pwodwi yo

Nimewo Pati : SIS612EDNT-T1-GE3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET N-CH 20V 50A SMT
Seri : TrenchFET®
Estati Pati : Obsolete
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 50A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 4.5V
RD sou (Max) @ Id, Vgs : 3.9 mOhm @ 14A, 4.5V
Vgs (th) (Max) @ Id : 1.2V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 70nC @ 10V
Vgs (Max) : ±12V
Antre kapasite (Ciss) (Max) @ Vds : 2060pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 3.7W (Ta), 52W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PowerPAK® 1212-8S (3.3x3.3)
Pake / Ka : PowerPAK® 1212-8S