[8784PC Stock]
- Nimewo Pati:
- GP1M011A050H
- Manifakti:
- Global Power Technologies Group
- Detaye deskripsyon:
- MOSFET N-CH 500V 11A TO220.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Tiristors - SCR - Modil yo, Diodes - Rèkteur - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Objektif espesyal, Transistors - Pwogramasyon Unijunction, Transistors - JFETs and Diodes - Zener - Single ...
- Avantaj konpetitif:
- We specialize in Global Power Technologies Group GP1M011A050H electronic components. GP1M011A050H can be shipped within 24 hours after order. If you have any demands for GP1M011A050H, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
GP1M011A050H Atribi pwodwi yo
Nimewo Pati :
GP1M011A050H
Manifakti :
Global Power Technologies Group
Deskripsyon :
MOSFET N-CH 500V 11A TO220
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
11A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
670 mOhm @ 5.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
28nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
1423pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
158W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220
Pake / Ka :
TO-220-3
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