[4125PC Stock]
- Nimewo Pati:
- SSM6L13TU(T5L,F,T)
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET N/P-CH 20V 800MA UF6.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Zener - Arrays, Transistors - IGBTs - Modil yo, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - RF, Tiristors - SCR, Tiristors - TRIACs and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage SSM6L13TU(T5L,F,T) electronic components. SSM6L13TU(T5L,F,T) can be shipped within 24 hours after order. If you have any demands for SSM6L13TU(T5L,F,T), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SSM6L13TU(T5L,F,T) Atribi pwodwi yo
Nimewo Pati :
SSM6L13TU(T5L,F,T)
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N/P-CH 20V 800MA UF6
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
N and P-Channel
Karakteristik FET :
Logic Level Gate, 1.8V Drive
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
800mA (Ta)
RD sou (Max) @ Id, Vgs :
143 mOhm @ 600mA, 4V, 234 mOhm @ 600mA, 4V
Vgs (th) (Max) @ Id :
1V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
-
Antre kapasite (Ciss) (Max) @ Vds :
268pF @ 10V, 250pF @ 10V
Pouvwa - Max :
500mW
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
6-SMD, Flat Leads
Pake Aparèy Founisè :
UF6
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