[606PC Stock]
- Nimewo Pati:
- DMN2170U-7
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET N-CH 20V 2.3A SOT23-3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Modil yo, Transistors - JFETs, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - RF, Transistors - Pwogramasyon Unijunction, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - FETs, MOSFETs - RF ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMN2170U-7 electronic components. DMN2170U-7 can be shipped within 24 hours after order. If you have any demands for DMN2170U-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN2170U-7 Atribi pwodwi yo
Nimewo Pati :
DMN2170U-7
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET N-CH 20V 2.3A SOT23-3
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2.3A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.5V, 4.5V
RD sou (Max) @ Id, Vgs :
70 mOhm @ 3A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±12V
Antre kapasite (Ciss) (Max) @ Vds :
217pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
600mW (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SOT-23-3
Pake / Ka :
TO-236-3, SC-59, SOT-23-3
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