Rohm Semiconductor - RSS100N03TB

KEY Part #: K6412318

[13487PC Stock]


    Nimewo Pati:
    RSS100N03TB
    Manifakti:
    Rohm Semiconductor
    Detaye deskripsyon:
    MOSFET N-CH 30V 10A 8-SOIC.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - Single, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Arrays, Tiristors - SCR, Diodes - Rèkteur - Arrays and Transistors - Objektif espesyal ...
    Avantaj konpetitif:
    We specialize in Rohm Semiconductor RSS100N03TB electronic components. RSS100N03TB can be shipped within 24 hours after order. If you have any demands for RSS100N03TB, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    RSS100N03TB Atribi pwodwi yo

    Nimewo Pati : RSS100N03TB
    Manifakti : Rohm Semiconductor
    Deskripsyon : MOSFET N-CH 30V 10A 8-SOIC
    Seri : -
    Estati Pati : Active
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 30V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 10A (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 4V, 10V
    RD sou (Max) @ Id, Vgs : 13 mOhm @ 10A, 10V
    Vgs (th) (Max) @ Id : 2.5V @ 1mA
    Chaje Gate (Qg) (Max) @ Vgs : 14nC @ 5V
    Vgs (Max) : 20V
    Antre kapasite (Ciss) (Max) @ Vds : 1070pF @ 10V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 2W (Ta)
    Operating Tanperati : 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : 8-SOP
    Pake / Ka : 8-SOIC (0.154", 3.90mm Width)