[2223PC Stock]
- Nimewo Pati:
- SSM3K01T(TE85L,F)
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET N-CH 30V 3.2A TSM.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Arrays, Diodes - Zener - Single, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Single and Transistors - Pwogramasyon Unijunction ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage SSM3K01T(TE85L,F) electronic components. SSM3K01T(TE85L,F) can be shipped within 24 hours after order. If you have any demands for SSM3K01T(TE85L,F), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SSM3K01T(TE85L,F) Atribi pwodwi yo
Nimewo Pati :
SSM3K01T(TE85L,F)
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N-CH 30V 3.2A TSM
Seri :
π-MOSVI
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3.2A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V, 4V
RD sou (Max) @ Id, Vgs :
120 mOhm @ 1.6A, 4V
Vgs (th) (Max) @ Id :
-
Chaje Gate (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±10V
Antre kapasite (Ciss) (Max) @ Vds :
152pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.25W (Ta)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TSM
Pake / Ka :
TO-236-3, SC-59, SOT-23-3
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