IXYS - IXTA380N036T4-7

KEY Part #: K6395218

IXTA380N036T4-7 Pricing (USD) [34068PC Stock]

  • 1 pcs$1.20972

Nimewo Pati:
IXTA380N036T4-7
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Transistors - IGBTs - Arrays, Diodes - Rèkteur - Single, Diodes - Zener - Single, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Single and Transistors - Bipolè (BJT) - RF ...
Avantaj konpetitif:
We specialize in IXYS IXTA380N036T4-7 electronic components. IXTA380N036T4-7 can be shipped within 24 hours after order. If you have any demands for IXTA380N036T4-7, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTA380N036T4-7 Atribi pwodwi yo

Nimewo Pati : IXTA380N036T4-7
Manifakti : IXYS
Deskripsyon : MOSFET N-CH
Seri : TrenchT4™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 36V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 380A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 1 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 260nC @ 10V
Vgs (Max) : ±15V
Antre kapasite (Ciss) (Max) @ Vds : 13400pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 480W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TO-263-7
Pake / Ka : TO-263-7, D²Pak (6 Leads + Tab)