SSM6N815R,LF Pricing (USD) [622023PC Stock]
- 1 pcs$0.05946
- Nimewo Pati:
- SSM6N815R,LF
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET 2N-CH 100V 2A 6TSOPF.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Tiristors - DIACs, SIDACs, Transistors - Objektif espesyal, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Arrays, Tiristors - TRIACs and Transistors - FETs, MOSFETs - RF ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage SSM6N815R,LF electronic components. SSM6N815R,LF can be shipped within 24 hours after order. If you have any demands for SSM6N815R,LF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SSM6N815R,LF Atribi pwodwi yo
Nimewo Pati :
SSM6N815R,LF
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET 2N-CH 100V 2A 6TSOPF
Seri :
U-MOSVIII-H
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate, 4V Drive
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2A (Ta)
RD sou (Max) @ Id, Vgs :
103 mOhm @ 2A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs :
3.1nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
290pF @ 15V
Pouvwa - Max :
1.8W (Ta)
Operating Tanperati :
150°C
Mounting Kalite :
Surface Mount
Pake / Ka :
6-SMD, Flat Leads
Pake Aparèy Founisè :
6-TSOP-F
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