[639PC Stock]
- Nimewo Pati:
- RRS130N03TB1
- Manifakti:
- Rohm Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 30V 13A 8-SOIC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - RF, Diodes - Zener - Arrays, Tiristors - TRIACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - SCR - Modil yo and Transistors - Pwogramasyon Unijunction ...
- Avantaj konpetitif:
- We specialize in Rohm Semiconductor RRS130N03TB1 electronic components. RRS130N03TB1 can be shipped within 24 hours after order. If you have any demands for RRS130N03TB1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RRS130N03TB1 Atribi pwodwi yo
Nimewo Pati :
RRS130N03TB1
Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET N-CH 30V 13A 8-SOIC
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
13A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
-
RD sou (Max) @ Id, Vgs :
9.5 mOhm @ 13A, 10V
Vgs (th) (Max) @ Id :
-
Chaje Gate (Qg) (Max) @ Vgs :
45nC @ 5V
Vgs (Max) :
-
Antre kapasite (Ciss) (Max) @ Vds :
2600pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
-
Operating Tanperati :
-
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-SOP
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
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