Nimewo Pati :
TSM6502CR RLG
Manifakti :
Taiwan Semiconductor Corporation
Deskripsyon :
MOSFET N/P-CH 60V 24A/18A 8PDFN
FET Kalite :
N and P-Channel
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
24A (Tc), 18A (Tc)
RD sou (Max) @ Id, Vgs :
34 mOhm @ 5.4A, 10V, 68 mOhm @ 4A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
10.3nC @ 4.5V, 9.5nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
1159pF @ 30V, 930pF @ 30V
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-PDFN (5x6)